• Low phase noise/jitter
• Low spurious content
• Microchip form factor
• Frequency scalability
• EMI tolerant
• High stability
• Low vibration/acceleration sensitivity

• Frequency: 8 - 12 GHz (Other frequencies available)
• RF output power: +10 dBm
• Phase Noise: -138 dBc/Hz @10 kHz
• Harmonics: -40 dBc

• Optical Output Power: -3 dBm
• PLL - Loop Bandwidth: 10 - 200 Hz
• Vibration/Acceleration Sensitivity: 5 x 10 ¯¹¹/g

• Radar systems
• Stable clocking
• Communication
• Tele/satellite communication
• Wireless networks
• Analog to digital conversion
• System synchronization

The unique design of the HI-Q® X-Band OEO is based on the photonic generation of spectrally pure signals at RF and millimeter wave frequencies that enable OEwaves’ signal sources to scale to higher frequencies with little to no penalty in phase noise performance.​The high performance of the X-Band OEO allows for clean and precise phase noise measurement, manifold enhancement of military radar system visibility, stable clocking and increased channel capacity of communications systems by an order of magnitude. X-Band OEO facilitates high capacity and high frequency future wireless communication systems. This level of performance enables manufacturers to retrofit current systems as well as architect capabilities to address new markets.